کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748796 894789 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Experimental characterization of the subthreshold leakage current in triple-gate FinFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Experimental characterization of the subthreshold leakage current in triple-gate FinFETs
چکیده انگلیسی

The gate and subthreshold drain leakage currents are investigated experimentally in triple-gate FinFETs for power supply voltage Vdd = 1 V. The gate and drain leakage currents are analyzed in terms of the fin width and gate length to clarify their origin. In wide FinFETs, the measured subthreshold drain current is much larger than the gate tunneling current due to the short-channel effects. In narrow FinFETs with negligible short-channel effects, the importance of the trap-assisted sidewall-gate edge tunneling current on the drain leakage current has been demonstrated. This leakage current behavior with decreasing the fin width has been attributed to the higher sidewall-gate interface trap density compared to the top-gate interface trap density.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 3, March 2009, Pages 359–363
نویسندگان
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