Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET

For the first time, a huge drain current fluctuations degradation is shown on heavily pocket-implanted above-micrometer devices. This degradation, which is a serious concern for analog design, is attributed to the high potential barriers that stand at end sides of long devices and mainly control the device electrostatics. Because the barriers height is modulated by the gate voltage, it is demonstrated that the excess fluctuations are highly gate-bias-dependent. The classical drain current model has been shown to be inadequate to describe the current flow through the entire range of applied gate bias voltages. A new adapted model allows for a correct description of the drain current and associated fluctuations.