Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs

The device and inverter characteristics based on InGaP/InGaAs n- and p-channel complementary pseudomorphic doped-channel HFETs are demonstrated. Particularly, the saturation voltage of the n-channel device is substantially reduced because the two-dimensional electron gas (2DEG) is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 109 (11.5) mS/mm and a saturation current density of 32.5 (−27) mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the noise margins NMH and NML values are up to 1.317 and 0.28 V, respectively, at a supply voltage of 2.0 V for complementary logic inverter application.