کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749371 | 1462267 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High pass filter with above IC integrated SrTiO3 high K MIM capacitors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper describes realization and characterization of SrTiO3 (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surface capacitance achieved is 10 nF/mm2 with capacitance value of 1.2 nF. The process for STO MIM fabrication does not exceed 400 °C, which is compatible with interconnections. Typical K and dielectric losses values obtained are, respectively 110% and 2%. Yield obtained reaches 83% for capacitors. A functional high pass filter using these STO capacitors was realized in this study. It exhibits a cut-off frequency at 6.5 kHz and a constant gain at higher frequencies of â1.3 dB.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issues 11â12, NovemberâDecember 2007, Pages 1624-1628
Journal: Solid-State Electronics - Volume 51, Issues 11â12, NovemberâDecember 2007, Pages 1624-1628
نویسندگان
Emmanuel Defaÿ, David Wolozan, Jean-Pierre Blanc, Emmanuelle Serret, Pierre Garrec, Sophie Verrun, Denis Pellissier, Philippe Delpech, Julie Guillan, Bernard André, Laurent Ulmer, Marc Aïd, Pascal Ancey,