High power and high breakdown δ-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT

δ-Doped In0.35Al0.65As/In0.35Ga0.65As metamorphic high electron mobility transistor (MHEMT) grown by molecular beam epitaxy (MBE) has been successfully investigated. High power characteristic are achieved due to the improved impact ionization and kink effects within the channel by bandgap engineering. This work demonstrates distinguished device characteristics, including superior breakdown performance (BVGD = −15.2 V and BVoff = 14.1 V), high small-signal gain (Gs = 22.7 dB), high microwave output power (Pout = 14.1 dB m at 2.4 GHz), and low minimum noise figure (NFmin = 1.1 dB). In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the studied metamorphic HEMT.