Incremental resistance programming of programmable metallization cells for use as electronic synapses

• We examine resistance programming of programmable metallization cell memory devices.
• Incremental resistance programming under electrical bias is experimentally observed.
• Results indicate suitability of PMC devices for neuromorphic circuit applications.

In this work, we investigate the resistance switching behavior of Ag–Ge–Se based resistive memory (ReRAM) devices, otherwise known as programmable metallization cells (PMC). The devices studied are switched between high and low resistive states under externally applied electrical bias. The presence of multiple resistive states observed under both dc and pulse voltage application makes these devices promising candidates for use as electronic synapses in neuromorphic hardware implementations. Finally, the effect of varying pulse voltage magnitude and width on the change in resistance is observed through measurement.