کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753292 895509 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A Haynes–Shockley experiment for spin-polarized electron transport in silicon
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A Haynes–Shockley experiment for spin-polarized electron transport in silicon
چکیده انگلیسی

Haynes and Shockley’s seminal measurements of minority-carrier transport in semiconductors 60 years ago ushered in a new age of solid-state electronics. However, device scaling issues now compel us to look toward alternative state variables other than charge. Manipulation of electron magnetic moment, or “spin”, in semiconductor devices could satisfy this need. The basics of this spin-based technology are discussed and the specific methods necessary for application to silicon are described. Similar to the Haynes–Shockley experiment, we also use a four-terminal device to make fundamental measurements of electron transport parameters that are now sensitive to spin, but without time-of-flight techniques.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 12, December 2009, Pages 1242–1245
نویسندگان
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