کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753593 1462268 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Scalable and multibias high frequency modeling of multi-fin FETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Scalable and multibias high frequency modeling of multi-fin FETs
چکیده انگلیسی

In the last few years, the fin field effect transistor is emerging as leading structure to continue the scaling of CMOS technology into nanometer regime. Here, we report on the determination of accurate equivalent circuit models from scattering parameter measurements of this novel kind of transistor, since it is an essential step to make a straightforward and physical consistent investigation of the RF behaviour. We focused on the bias dependence and the scalability of the extracted small signal model parameters. It is found that the extracted equivalent circuit parameters of the interdigitated multiple fin transistors under test follow successfully the conventional straightforward scaling rules and their bias dependence is in line with the expectations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issues 11–12, November–December 2006, Pages 1780–1786
نویسندگان
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