کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753623 | 895556 | 2005 | 21 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Antimonide-based compound semiconductors for electronic devices: A review Antimonide-based compound semiconductors for electronic devices: A review](/preview/png/753623.png)
Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrow-bandgap Sb-based devices over conventional GaAs- or InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors (HBTs). Progress on the HEMT includes the demonstration of Ka- and W-band low-noise amplifier circuits that operate at less than one-third the power of similar InP-based circuits. The RTDs exhibit excellent figures of merit but, like their InP- and GaAs-based counterparts, are waiting for a viable commercial application. Several approaches are being investigated for HBTs, with circuits reported using InAs and InGaAs bases.
Journal: Solid-State Electronics - Volume 49, Issue 12, December 2005, Pages 1875–1895