Group analysis of the drift–diffusion model for quantum semiconductors

• Conservation laws and solutions of drift–diffusion model for quantum semiconductors.
• Construction is based on the method of nonlinear self-adjointness.
• Exact solutions are obtained using the recent method of conservation laws.
• These solutions are different from group invariant solutions.

In the present paper a quantum drift–diffusion model describing semi-conductor devices is considered. New conservation laws for the model are computed and used to construct exact solutions.