کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7718488 | 1497482 | 2014 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
n- to p- type carrier reversal in nanocrystalline indium doped ZnO thin film gas sensors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: n- to p- type carrier reversal in nanocrystalline indium doped ZnO thin film gas sensors n- to p- type carrier reversal in nanocrystalline indium doped ZnO thin film gas sensors](/preview/png/7718488.png)
چکیده انگلیسی
Selectivity has been the central issue in the research area of semiconducting metal oxide gas sensors and still remains a challenge for the researchers. In the present work, we report a promising hydrogen (reducing gas) sensing characteristics of nanocrystalline indium doped zinc oxide thin film sensing elements. At sensor operating temperature in the range (200-300) °C, 'n' to 'p' type carrier reversal is detected in the measured resistance transients. Furthermore, for a given operating temperature the type of carriers remain unaltered for each concentrations of gas. Thus, temperature plays a crucial role for this transition irrespective of the gas concentration. However, such carrier reversal is not observed in NO2 (oxidizing gas) environment even with the variation of operating temperature and gas concentration. This is attributed to the gas sensing mechanism related to the surface conductivity and the underlying variations of the carrier type. It is argued that, it can pave the way for selective detection of hydrogen at lower operating temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 39, Issue 27, 12 September 2014, Pages 15134-15141
Journal: International Journal of Hydrogen Energy - Volume 39, Issue 27, 12 September 2014, Pages 15134-15141
نویسندگان
Sumati Pati, P. Banerji, S.B. Majumder,