کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
77522 49283 2016 6 صفحه PDF سفارش دهید دانلود کنید
عنوان انگلیسی مقاله ISI
Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells
ترجمه فارسی عنوان
رسوب لایه اتمی جوی فضایی لایه بافر Zn(O,S) برای سلول های خورشیدی Cu(In,Ga)Se2
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
چکیده انگلیسی


• Zn(O,S) buffer layers have been grown by spatial atomic layer deposition (S-ALD).
• S-ALD allows for accurate control over the S/(S+O) ratio in the Zn(O,S) film.
• Zn(O,S) buffer layers with various S/(S+O) ratio are applied in CIGS solar cells.
• A 6.5% increase in Jsc is achieved by replacing CdS by Zn(O,S) deposited by S-ALD.

Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior uniformity over large-area and even non-flat substrates. Diethylzinc, water and hydrogen sulfite (H2S) have been used as zinc, oxygen and sulfur precursor, respectively. The S/(S+O) ratio in the film is accurately controlled by exposing the substrate simultaneously to both H2O and H2S precursors, which are pre-mixed and co-injected in the same deposition zone. The optoelectronic and morphological properties of Zn(O,S) are characterized as a function of the S/(S+O) ratio. Zn(O,S) buffer layers with different values of S/(S+O) ratio are applied in CIGS solar cells. An optimum value of S/(S+O) ratio of about 0.4 is found for which both the short circuit current density (Jsc=34.2 mA/cm2) and cell efficiency (η=15.9%) increase, as compared to reference cells with CdS buffer layer (Jsc=32.1 mA/cm2, η=15.5%).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 155, October 2016, Pages 356–361
نویسندگان
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