High figure of merit and thermoelectric properties of Bi-doped Mg2Si0.4Sn0.6 solid solutions

- Bi doped Mg2.16Si0.4Sn0.6 showed 15% enhancement in the power factor as compared to Sb doped samples.
- Bi doping reduced κph of Mg2.16Si0.4Sn0.6 due to stronger point defect scattering.
- The highest ZT=1.4 at 800 K was achieved for Mg2.16(Si0.4Sn0.6)0.97Bi0.03.