Stability of the regeneration of the boron–oxygen complex in silicon solar cells during module integration

Light-induced degradation (LID) in boron-doped p-type Czochralski (Cz) silicon is caused by a boron–oxygen (BO) complex, which may be permanently deactivated by simultaneous illumination and heating leading to a permanent regeneration of carrier lifetime and solar cell performance. Up to now, regeneration has only been investigated on wafer and solar cell level. In this work, we investigate whether the regeneration gain on solar cell level can be transferred to module level. For this purpose, we fabricated solar cells with passivated emitter and rear on boron-doped p-type Cz and float zone wafers. The cells are extensively characterised regarding losses in cell performance due to LID by preparing different defect states with certain temperature and illumination treatments. The effect of the injection-dependent carrier lifetime caused by the BO complex in its active state on fill factor is investigated in detail theoretically and experimentally, developing a descriptive explanation. Finally, it is shown by integrating solar cells in the degraded and regenerated state into solar modules, that the regeneration effect can be transferred to module level and is stable upon subsequent illumination of the module.

► We investigate light-induced degradation on p-type Cz silicon.
► Passivated emitter and rear solar cells are fabricated and characterised.
► A degradation in conversion efficiency of 0.9%abs by LID is recovered by regeneration.
► Regeneration on cell level is stable upon module integration and illumination.