کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7839399 | 1505708 | 2018 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transport of 75-1000â¯eV electrons in metal-insulator-metal devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Metal-insulator-metal nanostructures with a 50â¯nm silver film and a 30â¯nm aluminum film separated by a few nanometer insulator layer (aluminum oxide) are irradiated with a focused eâ-beam (diameter â¤500â¯Î¼m) with kinetic energies in the range of 75-1000â¯eV. Impact angle and energy dependence of the eâ-beam induced electron emission from oxide covered aluminum and from silver show a good coincidence with previous results. The eâ-beam induced internal device current measured between the aluminum and the silver film, on the other hand, is found to be independent of the primary electron energy and impact angle. The results suggest that external electron emission may have to be included in the interpretation of the internal transport currents.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 223, February 2018, Pages 37-52
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 223, February 2018, Pages 37-52
نویسندگان
Mario Marpe, Andreas Wucher, Detlef Diesing,