کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7839645 | 1505858 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dependence of emitting light for LEDs fabricated by YAG:Ce crystal wafer on wafer thickness
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dependence of emitting light for LEDs fabricated by YAG:Ce crystal wafer on wafer thickness Dependence of emitting light for LEDs fabricated by YAG:Ce crystal wafer on wafer thickness](/preview/png/7839645.png)
چکیده انگلیسی
Influence of YAG:Ce crystal wafer thickness on their optical properties were investigated. The crystal wafers were cut from the YAG:Ce single crystal grown by the Czochralski technique. XRD patterns suggest the cubic phase of the grown single crystal. The transmittance spectra of YAG:Ce crystal wafers with different thicknesses show that they have strong absorption of Ce3+ ions in a wide wavelength range of 420-500â¯nm. Under the excitation at 465â¯nm, YAG:Ce crystal wafer shows emission band peaking at about 535â¯nm, which originates from the 5d1 â 4â¯f1 transition of Ce3+. The thickness of crystal wafer has obvious influence on Ce3+ emission intensity, which increases with the increasing wafer thickness and reach a maximum value at a thickness of 1.5â¯mm. Moreover, YAG:Ce crystal wafer shows excellently thermal stability. The emission intensity of Ce3+ emission at 510â¯K is about 68.3% of its initial intensity at 300â¯K. The fabricated WLED by the crystal chip with the thickness of 1.5â¯mm reaches a maximum luminous efficacy of 112.33â¯lm/W and a CCT value of 4458.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 204, December 2018, Pages 157-161
Journal: Journal of Luminescence - Volume 204, December 2018, Pages 157-161
نویسندگان
Yuguo Yang, Xuping Wang, Bing Liu, Yuanyuan Zhang, Xianshun Lv, Jing Li, Sa Li, Lei Wei, Huadi Zhang, Cong Zhang,