کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7840273 | 1505864 | 2018 | 26 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
p-n homojunction based on Bi doped p-type ZnO and undoped n-type ZnO for optoelectronic application in yellow-red region of visible spectrum
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Fabrication of zinc oxide (ZnO) based optoelectronic devices requires stable and reproducible p-type nanostructures. Keeping this fact in view, high-quality Bismuth (Bi) doped p-type ZnO thin films have been deposited on the n-Si substrate using sol-gel spin coating technique. Hall effect and hot point probe measurement confirm that deposited Bi doped ZnO film has p-type conductivity with a resistivity of 0.82â¯Î©-cm, carrier concentration of 1.1â¯Ãâ¯1018 cmâ3 and mobility of 6.9â¯cm2/ V-s at room temperature. A p-n homojunction has been fabricated by making use of this p-type ZnO and intrinsic n-type ZnO. The I-V characteristics of the fabricated p-n junction clearly show the rectifying nature. PL analysis reveals that the fabricated device exhibits deep level emission in yellow and red emission bands ascertaining its potential application in optoelectronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 198, June 2018, Pages 427-432
Journal: Journal of Luminescence - Volume 198, June 2018, Pages 427-432
نویسندگان
Brijesh Kumar Singh, Shweta Tripathi,