کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
78780 | 49342 | 2011 | 7 صفحه PDF | دانلود رایگان |
In order to investigate the effect of CdCl2 heat treatment on the physical properties of CdTe thin films grown by a sputtering method, the CdTe thin films were coated with CdCl2. The recrystallization, grain growth, randomization, and reaction kinetics were investigated by monitoring the phase transition of CdCl2-heat-treated CdTe specimens during temperature ramp annealing or isothermal soaking by using in-situ time-resolved high-temperature X-ray diffraction. The results of annealing show that the recrystallizations of CdTe (1 1 1) and other planes do not occur simultaneously, but sequentially in terms of temperature. The results of isothermal soaking imply that the Avrami diffusion-controlled reaction model fits well with the experimental data. This proves that the CdCl2 diffusion process is the dominant factor in the CdTe recrystallization mechanism.
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► Phase evolution and reaction kinetics study of CdTe thin films during CdCl2 heat treatment.
► The recrystallizations of CdTe (1 1 1) and others occur sequentially depending on temperature.
► The Avrami diffusion-controlled reaction model fits well with experimental data.
► CdCl2 diffusion process is a primary factor in the CdTe recrystallization process.
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 8, August 2011, Pages 2295–2301