کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7880653 | 1509589 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers](/preview/png/7880653.png)
چکیده انگلیسی
Typical CoFeB/MgO frames ensuring interface perpendicular magnetic anisotropy (PMA) features are one of the most reliable building blocks to meet the demand of PMA-based memory devices. However, employing the CoFeB/MgO frame with a Ta buffer layer has been restricted by the rapid PMA degradation that occurs during annealing at temperatures greater than 300 °C and the need of an ultrathin CoFeB layer of approximately 1.3 nm. Thus, the ability to enhance thermally strong PMA characteristics is still a key step toward extending their use. Here, we examine the effect of W layers on PMA features through both W buffer/CoFeB/MgO and MgO/CeFeB/W capping frames at various annealing temperatures. Highly stable PMA was achieved up to 450 °C at a specific W thickness, along with the presence of the dominant PMA properties at a relatively thick CoFeB greater than 1.3 nm and the achievement of a high Keff of approximately 5 Merg/cc.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 87, 1 April 2015, Pages 259-265
Journal: Acta Materialia - Volume 87, 1 April 2015, Pages 259-265
نویسندگان
Gwang-Guk An, Ja-Bin Lee, Seung-Mo Yang, Jae-Hong Kim, Woo-Seong Chung, Jin-Pyo Hong,