کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7881094 | 1509597 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Band-gap engineering of Cu2ZnSn1âxGexS4 single crystals and influence of the surface properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Thin film solar cells based on Cu2ZnSn(S,Se)4 are very promising, because they contain earth-abundant elements and show high absorptivity. However, the performance of these solar cells needs to be improved in order to reach efficiencies as high as that reported for Cu(In,Ga)Se2-based devices. This study investigates the potential of band-gap engineering of Cu2ZnSn1âxGexS4 single crystals grown by chemical vapour transport as a function of the [Ge]/([Sn] + [Ge]) atomic ratio. The fundamental band gap E0 is found to change from 1.59 to 1.94 eV when the Ge content is increased from x = 0.1 to x = 0.5, as determined from spectroscopic ellipsometry measurements. This knowledge opens a route to enhancing the performance of kesterite-based photovoltaic devices by a Ge-graded absorber layer. Furthermore, the formation of GeO2 on the surface of the as-grown samples was detected by X-ray photoelectron spectroscopy, having an important impact on the effective optical response of the material. This should be also taken into account when designing photovoltaic solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 79, 15 October 2014, Pages 181-187
Journal: Acta Materialia - Volume 79, 15 October 2014, Pages 181-187
نویسندگان
R. Caballero, I. Victorov, R. Serna, J.M. Cano-Torres, C. Maffiotte, E. Garcia-Llamas, J.M. Merino, M. Valakh, I. Bodnar, M. León,