کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
78985 | 49345 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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![عکس صفحه اول مقاله: Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells](/preview/png/78985.png)
چکیده انگلیسی
Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 105, October 2012, Pages 317–321
Journal: Solar Energy Materials and Solar Cells - Volume 105, October 2012, Pages 317–321
نویسندگان
Dong-Won Kang, Jang-Yeon Kwon, Jenny Shim, Heon-Min Lee, Min-Koo Han,