کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79200 | 49350 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Plasma-induced TCO texture of ZnO:Ga back contacts on silicon thin film solar cells Plasma-induced TCO texture of ZnO:Ga back contacts on silicon thin film solar cells](/preview/png/79200.png)
This paper considers texturing of ZnO:Ga (GZO) films used as back contacts in amorphous silicon (a-Si) thin film solar cells. GZO thin films are first prepared by conventional methods. The as-deposited GZO surface properties are modified so that their use as back contacts on a-Si solar cells is enhanced. Texturing is performed by simple dry plasma etching in a CVD process chamber,at power=100 W, substrate temperature=190 °C (temperature is held at 190 °C because thin film solar cells are damaged above 200 °C), pressure=400 Pa and process gas H2 flow=700 sccm. Conventional a-Si solar cells are fabricated with and without GZO back contact surface treatment. Comparison of the with/without texturing GZO films shows that plasma etching increases optical scattering reflectance and reflection haze. SEM and TEM are used to evaluate the morphological treatment-induced changes in the films. Comparison of the a-Si solar cells with/without texturing shows that the plasma treatment increases both the short-circuit current density and fill factor. Consequently, a-Si solar cell efficiency is relatively improved by 4.6%.
Journal: Solar Energy Materials and Solar Cells - Volume 95, Issue 2, February 2011, Pages 415–418