کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79269 | 49351 | 2012 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Al2O3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells Al2O3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells](/preview/png/79269.png)
An Al2O3 antireflection layer was placed between a glass substrate and a transparent conducting oxide layer in order to decrease optical reflection in microcrystalline silicon (μc-Si:H) p–i–n solar cells. Optical simulations showed that reflections were decreased by Al2O3 thin films, these reflections were found to be at a minimum when a 40 nm thick Al2O3 layer was used. Experimental results demonstrated that the measured reflectance of μc-Si:H solar cells was decreased by employing the proposed 40 nm Al2O3 in all wavelength regions and the quantum efficiency was also increased. The short-circuit current was increased from 22.7 to 23.5 mA/cm2 without sacrificing open circuit voltage or fill factor. The average efficiency of devices was improved from 6.02% to 6.32% by introducing 40 nm Al2O3 antireflection layer.
Journal: Solar Energy Materials and Solar Cells - Volume 101, June 2012, Pages 22–25