کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
79285 | 49351 | 2012 | 8 صفحه PDF | دانلود رایگان |
The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each group, increasing in certain cases the lifetime from 3 up to 81 μs.
► Internal and phosphorus gettering considerably enhances the lifetime in Elkem SoG-Si.
► Variable-temperature processes are more effective than constant-temperature ones.
► Lifetime may be increased by a factor of 20 after variable-temperature P-gettering.
► Optimal temperature for constant-temperature processes varies between 800 and 930 °C.
► Maximum temperature for variable-temperature processes is between 1100 and 1200 °C.
Journal: Solar Energy Materials and Solar Cells - Volume 101, June 2012, Pages 123–130