کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7933142 | 1512847 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, morphological, electrical and optical properties of PbSe thin films sputtered at various pressures
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Optical band gap control of lead selenide (PbSe) thin films is essential for realizing the practical applications. In this paper, PbSe thin films have been deposited by radio frequency (RF) magnetron-sputtering with varied sputtering gas pressures from 0.5 to 4.0â¯Pa. A systematical investigation of the film properties was carried on. X-ray diffractometry, atomic force microscopy, Hall effects measurements and UV-vis spectroscopy analyses were performed to investigate the crystal structural, morphological, electrical and optical properties of the films. The sputtering pressure has a significant effect on the structure and properties of the PbSe thin films. The intensity of the preferred orientation (200) increases with sputtering pressure up to 3.0â¯Pa, and then decreases at 4.0â¯Pa. The films are composed of equiaxed spherical crystals, whose roughness tends to increase with pressure. According to the Hall effect measurements, the resistivity linearly decreases from 1.6â¯Î©â¯cm to 0.02â¯Î©â¯cm, and the carrier concentration decreases from 1.19â¯Ãâ¯1020â¯cmâ3 (0.5â¯Pa) to 4.0â¯Ãâ¯1017â¯cmâ3 (4.0â¯Pa). The optical band gap ranges from 1.22 to 1.52â¯eV. The suitable pressure range is 2.0-3.0â¯Pa in this study.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 102, August 2018, Pages 153-159
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 102, August 2018, Pages 153-159
نویسندگان
Wenran Feng, Jiali Song, Yashuang Ren, Liya Yi, Jifei Hu, Ran Zhu, Haitao Dong,