کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7933538 | 1512850 | 2018 | 27 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300â¯V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200â¯V featured low crystallinity. When the bias voltage was 300â¯V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103â¯S/m; the conductivity of the treated nanowires ranged from 1â¯Ãâ¯104-5â¯Ãâ¯104, 1â¯Ãâ¯104-1â¯Ãâ¯105, and 1â¯Ãâ¯103-2â¯Ãâ¯104â¯S/m for bias voltage treatments at 100, 200, and 300â¯V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200â¯V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300â¯V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 99, May 2018, Pages 254-260
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 99, May 2018, Pages 254-260
نویسندگان
Ying Wang, Yicong Chen, Xiaomeng Song, Zhipeng Zhang, Juncong She, Shaozhi Deng, Ningsheng Xu, Jun Chen,