کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7933653 1512851 2018 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Transport through capacitively coupled embedded and T-shape quantum dots in the Kondo range
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Transport through capacitively coupled embedded and T-shape quantum dots in the Kondo range
چکیده انگلیسی
Strong electron correlations resulting from spin and charge pseudospin fluctuations together with interference effects are discussed in asymmetric set of capacitively coupled dots: embedded and side attached (EDTD). Finite - U mean field slave boson approach is used. The many body resonance exhibits SU(4) Kondo character at the embedded dot and SU(4) Kondo-Fano in the T-shaped arm. For the deep dot levels characteristic temperatures of these resonances coincide with the temperatures of corresponding resonances in symmetric double dot systems, embedded or side attached respectively. Linear transport properties through embedded or side attached dots are identical with linear transport characteristics of corresponding symmetric dot systems. Breaking of spin symmetry in one of the arms or in both allows a crossover to resonances of lower symmetries: SU(3) or SU(2). We also show the possibility of gate control of spin filtering in EDTD with polarized electrodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 98, April 2018, Pages 74-82
نویسندگان
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