کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7934275 1512875 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic properties of Z-shaped graphene nanoribbon under uniaxial strain
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Electronic properties of Z-shaped graphene nanoribbon under uniaxial strain
چکیده انگلیسی
Based on tight-binding approximation and a generalized Green's function method, the effect of uniaxial strain on the electron transport properties of Z-shaped graphene nanoribbon (GNR) composed of an armchair GNR sandwiched between two semi-infinite metallic armchair GNR electrodes is numerically investigated. Our results show that the increase of uniaxial strain enhances the band gap and leads to a metal-to-semiconductor transition for Z-shaped GNR. Furthermore, in the Landauer-Büttiker formalism, the current-voltage characteristics, the noise power resulting from the current fluctuations and Fano factor of strained Z-shaped GNR are explored. It is found the threshold voltage for the current and the noise power increased so that with reinforcement of the uniaxial strain parameter strength, the noise power goes from the Poisson limit to sub-Poisson region at higher bias voltages.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 74, November 2015, Pages 475-480
نویسندگان
, ,