کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7934520 | 1512892 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure](/preview/png/7934520.png)
چکیده انگلیسی
A study of vertical transport in δ-doped SiGe/Si heterostructures is presented. An asymmetrical triple barrier structure was grown with a δ-layer of boron impurity in the center of a narrow quantum well. The growth procedure was followed by conventional processing including photolithography, plasma etching and magnetron sputtering. Secondary-ion mass-spectroscopy depth profiling and high resolution x-ray diffraction were used to control the as-grown structure. The conductance of the structure was measured at liquid helium temperature and analyzed. All pronounced resonances were identified. The resonant feature near 60 mV is attributed to impurity-assisted tunneling, which is supported by calculation of the binding energy of the acceptor in the narrower quantum well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 57, March 2014, Pages 42-46
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 57, March 2014, Pages 42-46
نویسندگان
R.Kh. Zhukavin, N.A. Bekin, D.N. Lobanov, Yu.N. Drozdov, P.A. Yunin, M.N. Drozdov, D.A. Pryakhin, E.D. Chhalo, D.V. Kozlov, A.V. Novikov, V.N. Shastin,