کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938456 | 1513180 | 2018 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabless design approach for lateral optimization of low voltage GaN power HEMTs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper demonstrates a fabless design approach for the lateral optimization of a low voltage GaN power HEMT. Optimization of lateral scaling terms such as gate-to-drain, gate, and gate-to-source lengths allows for minimization of the figure-of-merit (RDS(on)â¯Ãâ¯QG) for a targeted breakdown voltage. Results show a FOM of 11â¯mΩ-nC for a device with a breakdown voltage >50â¯V. These results are for a given heterostructure design and estimated trap densities, and the effects of changing these estimated trap densities have been demonstrated to heavily influence breakdown behavior. As such, the focus of this study is on the relative difference between results rather than the absolute numbers. For this given design, results suggest that by shrinking LGD further the FOM can be reduced to 6.68â¯mΩ-nC with a breakdown of 71â¯V: representing a 74% decrease in FOM compared to the EPC 2023 device (30â¯V device) [1].
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 121, September 2018, Pages 92-106
Journal: Superlattices and Microstructures - Volume 121, September 2018, Pages 92-106
نویسندگان
Andrew Binder, Jiann-Shiun Yuan, Balakrishnan Krishnan, Patrick M. Shea,