کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938482 | 1513181 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of gamma irradiation on AlInGaN/AlN/GaN heterostructures grown by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of gamma irradiation on AlInGaN/AlN/GaN heterostructures grown by MOCVD Effect of gamma irradiation on AlInGaN/AlN/GaN heterostructures grown by MOCVD](/preview/png/7938482.png)
چکیده انگلیسی
The present work reports the effect of gamma-irradiation on the AlInGaN/AlN/GaN heterostructures with different doses: 75â¯kGy and 150â¯kGy. The compositional fluctuation and intermixing of the epilayers after gamma irradiation was realized by High Resolution X-ray diffraction. For 75â¯kGy and 150â¯kGy samples, the AlInGaN layer was merged with AlN interlayer after gamma irradiation which was realized by simulation fits Ï-2θ scans along (0002) plane. The Raman studies showed the degradation in crystalline quality of the gamma-irradiated samples and also confirmed that the alloy compositional fluctuations are due to In(Ga)N-like clusters in the AlInGaN epilayer. The optical properties of the samples were carried out using the room temperature Photoluminescence, which confirms the suppression of In(Ga)N-like clusters after gamma-irradiation. Morphological studies by Atomic Force Microscopy showed decrease in density of the V-pits with increasing gamma-dose. The Hall measurements confirmed the degradation in mobility, carrier concentration and sheet resistance after gamma-irradiation. Though AlInGaN samples underwent heavy doses of gamma-irradiation, the samples showed an electrical response which indicates that they will be suitable for use in harsh environments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 40-47
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 40-47
نویسندگان
S. Pradeep, R. Loganathan, S. Surender, K. Prabakaran, K. Asokan, K. Baskar,