Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga2O3 Schottky diodes

Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated on a 15 μm drift layer mechanically exfoliated from (100)-oriented β-Ga2O3 bulk. The temperature dependent current density-voltage (J-V) characteristics from 300 K to 550 K were investigated and the barrier height and ideality factor were determined. Compared with the thermionic emission (TE) model, the forward J-V behavior follows thermionic field emission (TFE) model and the reverse J-V characteristics can be explained by Poole-Frenkel model.