کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938702 | 1513181 | 2018 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Research on the growth of β-(AlGa)2O3 film and the analysis of electrical characteristics of Ni/Au Schottky contact using Tung's model
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Research on the growth of β-(AlGa)2O3 film and the analysis of electrical characteristics of Ni/Au Schottky contact using Tung's model Research on the growth of β-(AlGa)2O3 film and the analysis of electrical characteristics of Ni/Au Schottky contact using Tung's model](/preview/png/7938702.png)
چکیده انگلیسی
Single crystalline β-(AlGa)2O3 epilayer was grown on β-Ga2O3 (010) substrate using pulsed laser deposition. By high resolution X-ray diffraction and X-ray photoelectron spectroscopy measurements, the Al composition was determined to be 11%-13%, somewhat larger than that of target. In addition, Schottky diodes were fabricated on epitaxial β-(Al0.11Ga0.89)2O3 film using Ni/Au as the anode contacts and the electrical characteristics were performed in the temperature range from 300â¯K to 573â¯K. From the forward I-V curves, the Φb and n were obtained and they are both strongly dependent on the temperature, which was attributed to the inhomogeneous Schottky barrier height distribution. According to the Tung's model, the mean barrier height of 1.38â¯eV and A* of 46.52 Acmâ2Kâ2 are extracted by the modified Richardson plot.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 441-447
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 441-447
نویسندگان
Qian Feng, Zhuangzhuang Hu, Zhaoqing Feng, Xiangyu Xing, Yan Zuo, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang,