کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938717 | 1513184 | 2018 | 35 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of GaN nanostructures under various ammoniating time with fabricated Schottky gas sensor based on Si substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents the investigation of the influence of the ammoniating time of GaN nanowires (NWs) on the crystalline structure, surface morphology, and optical characteristics. Morphological analysis indicates the growth of good quality and high density of NWs with diameters around 50â¯nm and lengths up to tens of microns after ammoniating for 30â¯min. Structural analysis shows that GaN NWs have a typical hexagonal wurtzite crystal structure. Raman spectroscopy confirms the formation of GaN compound with the presence of compressive stress. Photoluminescence (PL) measurements revealed two band emissions, an UV and a broad visible emission. Hydrogen sensor was subsequently fabricated by depositing Pt Schottky contact onto GaN NWs film. The sensor response was measured at various H2 concentrations ranged from 200 up to 1200â¯ppmâ¯at room temperature. It was found that the response increases significantly for low H2 concentration (200-300â¯ppm) to reach about 50% then increases smoothly to reach 60% at 1200â¯ppm. The as-fabricated sensor possesses higher performances as compared to similar devices reported in the literature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 117, May 2018, Pages 92-104
Journal: Superlattices and Microstructures - Volume 117, May 2018, Pages 92-104
نویسندگان
Q.N. Abdullah, A.R. Ahmed, A.M. Ali, F.K. Yam, Z. Hassan, M. Bououdina, M.A. Almessiere,