Some investigations on fracture and its variation of length in GaN-based HEMT

AlGaN/GaN-based HEMT with ohmic contacts made of Al/Ti/Au metals is one reason for crack. Fracture effect is caused during the manufacturing process. The stress-energy acts during annealing causes crack in the layer of the HEMT device. The strain energy makes the increase in the length of the crack. In this paper, plane stress and strain is been broadly analyzed and studied with the crack. The rate of change of energy released per unit crack is also studied and is seen changing linearly.