کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7938766 1513181 2018 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Single-crystalline Si nanowires fabrication by one-step metal assisted chemical etching: The effect of etching time and resistivity of Si wafer
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Single-crystalline Si nanowires fabrication by one-step metal assisted chemical etching: The effect of etching time and resistivity of Si wafer
چکیده انگلیسی
The one-step metal assisted chemical etching (1-MACE) of p-Si wafers with different resistivities and etching time in HF/AgNO3/H2O2 aqueous solution, resulted in large-area vertical Si nanowires (SiNWs). The field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) revealed that the diameters and lengths of nanowires are decreased with increasing the doping level of Si wafer, while their roughness and porosity are increased. The selected area electron diffraction (SAED) patterns showed that SiNWs retain their single-crystal structure of starting wafers. The reflectance spectra indicated that the etched samples have a very low reflectance (∼0.1% and less) in the visible range acting as an anti-reflecting and high absorption layer in solar cells. Furthermore, broadband PL emissions are observed only in samples etched for 60 and 80 min, that are well consistent with the TEM images and Raman shift spectra analysis considering the formation of Si nanocrystals (SiNCs) (∼2.3-3.5 nm) decorated on the sidewalls of the nanowires.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 517-524
نویسندگان
, ,