Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure

Electric, magnetic and resonance properties of La0·7Ba0·3MnO3/ZnO heterostructure fabricated on MgO (001) and LaAlO3 (100) substrates by ion-beam sputtering have been studied in the work. Good crystallinity and phase purity of all heterostructure components have been confirmed using X-ray diffraction. Phase separated magnetic state of the manganite layer of heterostructure has been experimentally proved in the temperature region from 300 K down to 3 K. It has been shown that (La,Ba)MnO3/ZnO bilayer exhibits multi-step resistive switching as voltage exceeds a certain temperature-dependent threshold value. Detailed study of the resistive switching processes has been carried out at room temperature and in the low-temperature region. It is concluded that phase-separated state of manganites is responsible for strong temperature-induced transformation of the features of resistive switching phenomena.