کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938810 | 1513181 | 2018 | 30 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Down-shifting emission by charge transfer band in porous silicon infiltrated with Eu3+ and Gd3+ ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Down-shifting emission properties of europium (Eu3+) and gadolinium (Gd3+) ions incorporated in porous silicon (PS) layers are presented. Different samples were prepared by electrochemical etching of p+-type crystalline silicon wafers followed by simple impregnation with rare earth ions from nitrate solutions of europium and gadolinium and subsequent high temperature annealing in air. The samples exhibited room temperature photoluminescence (PL) and the excitation spectra present a wide excitation band around 233â¯nm which can be associated to the charge transfer band transitions. This band is attributed to O2â(2p)âEu3+(4f) ligand-to-metal charge transfer. The down-shifting emission for Gd+3:Eu3+ was analyzed by a simple rate equation model to study the interaction between the O2â ions and Eu3+ ions. The exact solution of this model agrees very well with the experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 588-597
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 588-597
نویسندگان
Z. Lazcano, R. Silva, U. Salazar-Kuri, J. Arriaga, O. Meza,