کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938820 | 1513181 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain and built-in fields in wurtzite GaN/AlxIn1âxN quantum wells and quantum dots
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strain and built-in fields in wurtzite GaN/AlxIn1âxN quantum wells and quantum dots Strain and built-in fields in wurtzite GaN/AlxIn1âxN quantum wells and quantum dots](/preview/png/7938820.png)
چکیده انگلیسی
Strain and built-in fields in wurtzite (WZ) GaN/AlxIn1âxN quantum wells (QWs) and quantum dots (QDs) with piezoelectric (PZ) and spontaneous (SP) polarizations were investigated by using a multi-band effective mass theory. In the case of GaN/AlInN QW structures, the built-in field in the well nearly becomes zero for the QW structure with xâ¯=â¯0.7 while the potential well depth in the conduction band is very small. However, the GaN/AlInN QD structures show that the built-in field in the GaN dot does not become zero in a range of an investigated Al content and the carrier confinement is possible even for the QD structure with xâ¯=â¯0.7. The potential profiles of both QW and QD structures change from type-I to type-II at the Al content of xâ¯=â¯0.7. These results can be used as a design guide for fabrications of QD-based optoelectronic devices with a high emission intensity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 611-615
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 611-615
نویسندگان
Seoung-Hwan Park,