کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7938864 1513181 2018 16 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate
چکیده انگلیسی
Dependence of carbon doping concentration on the strain-state and properties was studied in detail for the GaN on Si system. Combining the results of XRD and Raman spectra, it is found that compressive stress is introduced into the GaN with a moderate carbon concentration, while it turns into tensile stress when the carbon concentration is higher than a critical point. A possible mechanism is that the carbon tend to replace the N atom in GaN at a relative lower carbon concentration because of the relatively smaller formation energy, while it turned to replace the Ga atom after the carbon concentration is higher than a critical level. Those results are also confirmed by the photoluminescence spectrum.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 120, August 2018, Pages 720-726
نویسندگان
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