کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938934 | 1513184 | 2018 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance analysis of gate all around GaAsP/AlGaSb CP-TFET
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Illustration of importance of gate all around (GAA) structure and hetero-junction formed by III-V semiconductor compounds has been analysed through GaAsP/AlGaSb CP-TFET (charge plasma tunnel field effect transistor). Charge plasma concept has been incorporated here to make this device more immune towards random dopant fluctuations (RDF). A high driving current of 1.28Ã10â5 A/μm and transconductance (gm) of 96.4â¯â¯Î¼Sâ¯at supply voltages VGSâ¯=â¯1V and VDSâ¯=â¯0.5V is achieved. Further, implications of employing this device in analog/RF circuits have been supported with simulated results showing a high cut-off frequency of 34.5â¯THz and device efficiency of 3.45â¯MVâ1. Apart from this, an insight of the linearity performances has also been included. Simultaneously, all the results are compared with a conventional gate all around charge plasma TFET.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 117, May 2018, Pages 364-372
Journal: Superlattices and Microstructures - Volume 117, May 2018, Pages 364-372
نویسندگان
Alemienla Lemtur, Dheeraj Sharma, Priyanka Suman, Jyoti Patel, Dharmendra Singh Yadav, Neeraj Sharma,