کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938977 | 1513186 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Assessment of read and write stability for 6T SRAM cell based on charge plasma DLTFET
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Assessment of read and write stability for 6T SRAM cell based on charge plasma DLTFET Assessment of read and write stability for 6T SRAM cell based on charge plasma DLTFET](/preview/png/7938977.png)
چکیده انگلیسی
To overcome the process variations due to random dopant fluctuations (RDFs) and complex annealing techniques a charge plasma based doping less TFET (CP-DLTFET) device has been proposed for designing of 6T SRAM cell. The proposed device also benefited by subthreshold slope, low leakage current, and low power supply. In this paper, to avoid the dependency of stability parameters of SRAM cell to supply voltage (Vdd), here N-curve metrics has been analyzed to determine read and write stability. Because N-curve provides stability analysis in terms of voltage and current as well as it gives combine stability analysis with the facility of an inline tester. Further, analyzing the N-curve metrics for different Vdd, cell ratio, and pull-up ratio assist in designing the configuration of transistors for the better read and write stability. Power metrics of N-curve gives the knowledge about read and write stability instead of using four metrics (SINM, SVNM, WTV, and WTI) of N-curve. Finally, in the 6T CP-DLTFET SRAM cell, read and write stability is tested by the interface trap charges (ITCs). The performance parameter of the 6T CP-DLTFET SRAM cell provides considerable read and write stability with less fabrication complexity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 115, March 2018, Pages 67-77
Journal: Superlattices and Microstructures - Volume 115, March 2018, Pages 67-77
نویسندگان
Anju Anju, Shivendra Yadav, Dheeraj Sharma,