کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939070 | 1513187 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of the number of wells on the performance of green InGaN/GaN LEDs with V-shape pits grown on Si substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The effect of the number of wells on quantum efficiency and forward voltage of vertical green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) grown on Si substrate has been experimentally investigated. We have prepared three LED samples with 3, 5 and 7 wells. Electroluminescence measurement shows that the LED with 5 wells has the highest external quantum efficiency (EQE) and the lowest forward voltage. It is observed that V-shaped pits grow up in size and density with an increase in quantum well number by means of scan electron microscope. Due to more hole injection via V-shaped pits, a larger area ratio of pits as a result of more number of wells would bring a lower forward voltage and a higher EQE. However, besides the increasing series resistance would bring a higher forward voltage, the interface of MQWs would become rougher and deteriorate the emission efficiency when increasing the wells number.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 89-96
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 89-96
نویسندگان
Qingfeng Wu, Jianli Zhang, Chunlan Mo, Xiaolan Wang, Zhijue Quan, Xiaoming Wu, Shuan Pan, Guangxu Wang, Junlin Liu, Fengyi Jiang,