کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7939070 1513187 2018 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of the number of wells on the performance of green InGaN/GaN LEDs with V-shape pits grown on Si substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Effects of the number of wells on the performance of green InGaN/GaN LEDs with V-shape pits grown on Si substrates
چکیده انگلیسی
The effect of the number of wells on quantum efficiency and forward voltage of vertical green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) grown on Si substrate has been experimentally investigated. We have prepared three LED samples with 3, 5 and 7 wells. Electroluminescence measurement shows that the LED with 5 wells has the highest external quantum efficiency (EQE) and the lowest forward voltage. It is observed that V-shaped pits grow up in size and density with an increase in quantum well number by means of scan electron microscope. Due to more hole injection via V-shaped pits, a larger area ratio of pits as a result of more number of wells would bring a lower forward voltage and a higher EQE. However, besides the increasing series resistance would bring a higher forward voltage, the interface of MQWs would become rougher and deteriorate the emission efficiency when increasing the wells number.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 89-96
نویسندگان
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