کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939092 | 1513187 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Understanding the effect of inelastic electron-phonon scattering and channel inhomogeneities on a nanowire FET
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Using self-consistent Non-Equilibrium Green's Function formalism, the effect of the inelastic scattering due to electron-phonon interaction on the transfer and output characteristics of a coaxially gated generic nanowire field effect transistor has been studied in detail. The scattering strength Do is varied from 0.003â¯eV2 to 0.3â¯eV2. There is change in the threshold voltage and suppression of channel current with increasing scattering strength. We also studied the effect of channel inhomogeneities on electron energy. The channel inhomogeneities are invoked by introducing potential step inside the channel. We study the energy relaxation due to inelastic scattering and channel inhomogeneities by comparing the normalized terminal current per energy for the source and drain terminals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 183-191
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 183-191
نویسندگان
Niladri Sarkar,