کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939128 | 1513187 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, we report the simulation, fabrication and characterisation of UV photo-detectors with bottom gate ZnO Thin Film Transistors (TFTs), grown on silicon at room temperature using RF magnetron sputtering process. The static performance of these detectors have been explored by varying the channel lengths (6â¯Î¼m and 12â¯Î¼m). The fabricated devices show low leakage currents with threshold voltages of 1.18 & 2.33â¯V, sub-threshold swings of 13.5 & 12.8â¯V/dec for channel lengths of 6â¯Î¼m and 12â¯Î¼m TFT, respectively. They also exhibit superior electrical characteristics with an ON-OFF ratio of the order of 3. The detector was also tested for device stability, with the transfer characteristics of the TFTs, which got deteriorated mainly by the negative bias-stress. The TFTs were further tested for UV detector applications and found to exhibit good photo-response.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 284-295
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 284-295
نویسندگان
Tarun Varma, C. Periasamy, Dharmendar Boolchandani,