Optical emission of two-dimensional arsenic sulfide prepared by plasma

For the first time optical emission of prepared in plasma two-dimensional arsenic sulphide materials “beyond graphene” has been demonstrated. A strong structural photoluminescence exited by continuous wave operation lasers with a laser excitation wavelength of 473 nm and 632.8 nm has been observed. The influence of excitation parameters, chemical composition, structure, and annealing conditions on the intensity of photoluminescence of the chalcogenide materials has been established. Mass-spectrometry and Raman spectroscopy were coupled with quantum-chemical calculations to reveal the fragments which are the building blocks of the 2D As-S materials. A plausible mechanism of formation and modification of the arsenic sulfide luminiscenting structural units has been proposed. The properties of the 2D pole-structured and layered arsenic sulphide could be a key to advancing the 2D photosensitive devices.