Potential study of the enhanced breakdown voltage GaN MISFET based on partial AlN buried layer

Potential study of the enhanced breakdown voltage GaN MISFET based on partial AlN buried layer

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 314-320

Xin-Xing Fei, Ying Wang, Xin Luo, Fei Cao, Cheng-Hao Yu,