کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7939155 1513187 2018 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Magnetic field effects on charge structure factors of gapped graphene structure
ترجمه فارسی عنوان
اثرات میدان مغناطیسی بر عوامل ساختاری شارژ ساختار گرافن گاف
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
We present the behaviors of dynamical and static charge susceptibilities of undoped gapped graphene using the Green's function approach in the context of tight binding model Hamiltonian. Specially, the effects of magnetic field on the plasmon modes of gapped graphene structure are investigated via calculating correlation function of charge density operators. Our results show the increase of magnetic field leads to disappear high frequency plasmon mode for gapped case. We also show that low frequency plasmon mode has not affected by increase of magnetic field and chemical potential. Finally the temperature dependence of static charge structure factor of gapp graphene structure is studied. The effects of both magnetic field and gap parameter on the static structure factor are discusses in details.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 114, February 2018, Pages 361-369
نویسندگان
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