کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939230 | 1513188 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of trap energy states in AlGaN/InGaN/GaN heterostructure is investigated by temperature dependent threshold voltage measurement from 298Â K to 373Â K. It is found that the threshold voltage of AlGaN/InGaN/GaN structure decreases from - 6.52Â V to - 6.90Â V with temperature increase from 298Â K to 348Â K. But for the temperature higher than 348Â K, the threshold voltage starts to increase and reaches to - 6.75Â VÂ at 373Â K. However, the threshold voltage for AlGaN/GaN structure decreases consistently from â5.32Â V to â6.4Â V for entire range of temperature. The decrease of threshold voltage is attributed to the surface donor trap charges for both the heterostructures. Furthermore, the acceptor trap charges might have contributed for temperature above 348Â K, and hence the increase of threshold voltage is observed in AlGaN/InGaN/GaN heterostructure. Higher crystal defects, resulted from lower growth temperature, might be responsible for the formation of these acceptor trap levels in InGaN layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 147-152
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 147-152
نویسندگان
Apurba Chakraborty, Saptarsi Ghosh, Partha Mukhopadhyay, Subhashis Das, Ankush Bag, Dhrubes Biswas,