کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7939256 | 1513188 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Suspended light-emitting diode featuring a bottom dielectric distributed Bragg reflector
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Here, we propose, fabricate and characterize the light manipulation of a suspended-membrane InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED) with a dielectric distributed Bragg reflector (DBR) positioned at the bottom, implemented on a GaN-on-silicon platform. Silicon removal is conducted to obtain the suspended MQW-LED architecture, and back wafer thinning of the epitaxial film is performed to improve the device performance. A 6-pair SiO2/Ta2O5 DBR is deposited on the backside to manipulate the emitted light. The experimental results demonstrate that the bottom dielectric DBR exhibits high reflectivity and distinctly changes the light emission, which are consistent with the performed simulation results. This work represents a significant step towards the realization of inexpensive, electrically driven and simply fabricated GaN VCSELs for potential use in number of applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 228-235
Journal: Superlattices and Microstructures - Volume 113, January 2018, Pages 228-235
نویسندگان
Wei Cai, Wei Wang, Bingcheng Zhu, Xumin Gao, Guixia Zhu, Jialei Yuan, Yongjin Wang,